Today, Toshiba starts shipping a 1200V SiC MOSFET for high power industrial applications including 400V AC input AC-DC power supplies, Photovoltaic (PV) inverters and bi-directional DC-DC converters ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
A MOSFET in the conducting state works with maximum efficiency, as the Drain-Source voltage is minimal, as is the power dissipation. But if it works in a dynamic system, the fast switching relegates ...
Scaling metal oxide semiconductor field effect transistors (MOSFETs) to ever smaller dimensions has delivered key benefits like performance improvement, reduced power consumption and higher-density ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
Infineon Technologies is to develop a two-terminal semiconductor device that acts as a circuit breaker for hundreds of volts and amps: doubling the performance of its mains-voltage super-junction ...
Find a downloadable version of this story in pdf format at the end of the story. Cree, Inc. has gained the distinction of producing the industry's first fully-qualified, commercial silicon carbide ...
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